Write assist techniques are now commonly used to lower the minimum operating voltage (Vmin) of an SRAM. One of the key reasons to push the SRAM Vmin lower is to enable efficient Dynamic Voltage and Frequency Scaling (DVFS) to save power. In this paper, we discuss the basics of SRAM faliure mechanisms, fundamentals of write assist techniques, ARM® Artisan® Low Voltage Memory Compilers with the write assist feature and results from GLOBALFOUNDRIES 28nm-SLP memories.
Write Assist in Low-Voltage SRAMs
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