Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS 11 platform, the industry’s first RF SOI technology built on GLOBALFOUNDRIES’ 130nm 300mm RF technology platform. By moving to a 300mm wafer, Peregrine opens the door to new enhancements and advanced features in future generations of the UltraCMOS technology platform, which can leverage GLOBALFOUNDRIES’ 300mm production-proven design enablement and manufacturing expertise and scale.
To develop the next-generation UltraCMOS 11 platform, Peregrine collaborated with tier-one fab GLOBALFOUNDRIES. UltraCMOS 11 technology uses a custom fabrication flow from GLOBALFOUNDRIES’Fab 7 facility in Singapore.
“As an industry first, the new RF SOI technology reaffirms our commitment to the RF market, and is another example how GLOBALFOUNDRIES’ 300mm fab in Singapore can provide new levels of performance, reliability and scalability for integrated RF front-end solutions,” said Brian Harrison, senior vice president of Integration and Factory Management at GLOBALFOUNDRIES. “We are pleased to see the tremendous efforts resulted in this achievement, and we will continue to leverage our RF process development expertise and manufacturing scale to maximize the technology’s capabilities and drive differentiation with our customers.”
The UltraCMOS 11 platform will be the foundation for Peregrine’s high volume mobile products and SOI products for other applications. It builds on the success of the award-wining UltraCMOS 10 technology platform, also developed and manufactured by GLOBALFOUNDRIES, and offers unparalleled performance and cost-competitive advantages.