Toshiba Now Shipping Samples of 64-Layer, 512Gb 3D Flash Memory
Toshiba America Electronic Components, Inc. has added a 512 gigabit (64 gigabyte), 64-layer device with 3-bit-per-cell triple-level cell (TLC) technology to its industry-leading BiCS FLASH product line. This technology will enable a 1-terabyte (TB) chip solution.
BiCS FLASH is a three-dimensional (3D) flash memory stacked cell structure and is suitable for applications that require high capacity and performance, such as enterprise and consumer solid state drives, including Toshiba’s own SSD portfolio. Sample shipments of the new 512Gb devices have begun, with mass production scheduled for the second half of 2017.
As a 3D flash memory leader, Toshiba continues to refine its BiCS FLASH offerings. The next milestone on its BiCS FLASH development roadmap will feature the industry’s largest capacity, a 1TB product with a 16-die stacked architecture, in a single package. Plans call for sample shipments to commence in April of this year.
Toshiba’s new 512Gb BiCS FLASH device is based on its cutting-edge, third generation, 64-layer stacking process that realizes a 65 percent larger capacity per unit chip size than the company’s 48-layer, 256Gb (32 gigabyte) device. This increases memory capacity per silicon wafer and leads to a reduction of cost-per-bit.
In addition to the new 512Gb device, Toshiba’s BiCS FLASH lineup also includes a 64-layer 256Gb (32 gigabyte) offering, which is currently in mass production. According to Scott Nelson, senior vice president of TAEC’s memory business unit, “The introduction of our third generation BiCS FLASH coupled with the industry’s largest 1TB chip solution strongly reinforces Toshiba’s flash memory leadership position. These innovations underline our commitment to developing leading-edge memory solutions, and we will continue to advance our 3D technology to meet the ever-increasing storage market demand.”
In support of this commitment, Toshiba recently announced that construction has begun on a new state-of-the-art semiconductor fabrication facility, Fab 6, and a new memory-focused R&D Center, at Yokkaichi Operations in Mie Prefecture, Japan. Fab 6 will be dedicated to the production of BiCS FLASH.