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Global 3D NAND Flash Memory Market 2017-2023

The global 3D NAND flash memory market is expected to have a CAGR of 33% during the forecast period 2016-2023, according to the “Global 3D NAND Flash Memory Market Insights, Opportunity Analysis, Market Shares and Forecast, 2017 – 2023” report from Research and Markets.

Due to higher memory storage capacity, flexibility to use, and compact size 3D NAND flash memory chips are used in wide range of applications such as smartphones, video games, audio players etc.

Asia Pacific accounted for the largest market revenue share in 2016 and is expected to continue its dominance during the forecast period. The key factors driving the growth of global 3D NAND flash memory market in Asia Pacific is the presence of large number of key market players such as Samsung, Toshiba etc., Moreover, there is vast production base of semiconductor and flash memory in China, Japan, and South Korea, along with a vast number of consumer base in China and India.

This is due to the increasing penetration of smart phones and tablets which has provided major contribution in the revenue generation of flash memory chips. Furthermore, due to the increasing manufacturing of smartphones and other smart devices will provide as significant contribution to the growth of 3D NAND flash memory market.

Global 3D NAND flash memory market is influenced by the presence of key market players such as Apple Inc.,Samsung Electronics, Advanced Micro Devices, Intel Corporation, and Toshiba Corporation etc. Product launch, joint ventures, merger and acquisition are some of the crucial strategies adopted by the key market players to gain competitive advantage.

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