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GaN will Push Microwave RF Power Semiconductor Market to Over $250 Million by 2018

Spending on microwave RF power semiconductors has been kick-started by the availability of new gallium nitride (GaN) devices for 4 to 18 GHz. Point-to-point communications, SATCOM, radars of all types and new industrial/medical applications will all benefit by the introduction of these high-power GaN devices, finds market intelligence firm ABI Research.

“While gallium arsenide devices are presently the backbone of microwave RF power it is gallium nitride that will drive growth going forward,” notes research director Lance Wilson. “GaN can operate at much higher voltages and at power levels that were difficult or impossible to reach using GaAs.”

In addition to the above mentioned application segments, microwave GaN is finally reaching the performance points that can start to seriously challenge travelling wave tube applications for new designs that have historically used the latter.

These findings are part of ABI Research’s High-Power RF Active Devices Research Service, which also includes other Research Reports, Market Data, and analyst inquiry support.

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