Element Six Introduces Electrically Conductive CVD Diamond Heat Spreader, Diafilm ETC700, For High Frequency And Advanced Electronic Devices

Element Six, a member of The De Beers Group of Companies, announced the development of a thermal grade of synthetic diamond grown by chemical vapor deposition (CVD), Diafilm ETC700. The material is both thermally and electrically conductive and is uniquely suited to effectively manage heat in high frequency, high power density devices.

With a thermal conductivity up to 700 W/mK, Diafilm ETC700 CVD diamond heat spreaders are three times more effective in spreading heat than alternative ceramic solutions. This electrically conductive all-diamond solution does not require the metal coatings typical of other heat management materials, resulting in reduced frequency dependent conductive losses.

Diafilm ETC700 outperforms all other commercially available metallized, non-diamond heat spreader materials or common metal solutions. A larger conduction cross-section enables better RF performance by improving the ground-plane isolation. Diafilm ETC700 maintains a high bulk thermal conductivity, whilst the bulk electrical conductivity reduces capacitive coupling between ground planes at low frequencies, and reduces conductive losses at higher frequencies.

Element Six’s range of Diafilm TM heat spreaders have the highest known thermal conductivity of any solid material at room temperature and are available in a range of sizes, thicknesses and metallization. With the addition of Diafilm ETC700, Element Six expands its portfolio to a total of six material grades spanning several levels of thermal, electrical performance and cost points, ranging from 700 W/mK to 2000 W/mK.

CVD diamond is a superior material for high power density/high frequency devices due to a unique combination of exceptional properties including high thermal conductivity, mechanical strength, electrical insulation, low weight and chemical inertness. Diafilm ETC700 offers better electrical device operation, lower operating temperatures and improved reliability and longer lifespans of high frequency active semiconductors.

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