Toshiba Introduces Low Reverse-Current Schottky Barrier Diodes for Voltage Boosting Circuits
Toshiba America Electronic Components, Inc. (TAEC) has expanded its portfolio of diodes with the addition of six low reverse-current Schottky barrier diodes (SBDs). With a peak reverse voltage of 40V, the new CCS15F40, CUS15F40, CBS10F40, CUS10F40, CTS05F40, and CUS05F40 are suitable for voltage boosting circuits in white LED backlights and for liquid crystal displays in mobile devices (including smartphones and tablet PCs).
The reverse current of the CCS15F40, one of the new products, is 25μA (max), and the SBD’s thermal runaway temperature is 35°C higher than previous products, which contributes to stable circuit operations. The CCS15F40 features fast switching due to low total capacitance of 130pF (typ.) @VR=0V. A low reverse current contributes to the low power consumption of the device, making thermal runaways unlikely, even in high-temperature environments.
Toshiba’s entire lineup of surface mounting diode products are available in many package types and sizes, making them suitable for today’s applications where lightweight, compact size and high efficiency are of the utmost importance. In addition to the industry standard SOD-323 package, Toshiba has introduced leadless surface mounting packages (CST2C, CST2B) and SOD-882 packages (CST2) in to the SBD lineup, which contribute to making devices slimmer and smaller.
“As mobile devices become more and more sophisticated, the use of voltage boosting circuits of 30V or higher will increase,” noted Talayeh Saderi, senior business development manager for TAEC.